SEMICONDUCTOR DEVICE AND POWER CONVERSION CIRCUIT

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, a gate electrode, a drain electrode and a source electrode. The gate electrode, the drain electrode and the source electrode are formed on the semiconductor substrate. An area of the source electrode is...

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Hauptverfasser: MATSUURA, Nobuyoshi, SHIRAI, Nobuyuki
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creator MATSUURA, Nobuyoshi
SHIRAI, Nobuyuki
description A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, a gate electrode, a drain electrode and a source electrode. The gate electrode, the drain electrode and the source electrode are formed on the semiconductor substrate. An area of the source electrode is larger than an area of the gate electrode and the area of the drain electrode. A part of the source electrode has a convex shape and disposed between the gate electrode and the drain electrode. The semiconductor device of the invention can maintain various switching characteristics and enable high-speed switching.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND POWER CONVERSION CIRCUIT
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