SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device includes a first electronic component, a second electronic component and a plurality of interconnection structures. The first electronic component has a first surface. The second electronic component is over the first electronic component, and the second electronic component h...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HOU, SHANG-YUN, WU, CHI-HSI, CHEN, WEIMING CHRIS, YU, TU-HAO, TING, KUOIANG
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HOU, SHANG-YUN
WU, CHI-HSI
CHEN, WEIMING CHRIS
YU, TU-HAO
TING, KUOIANG
description A semiconductor device includes a first electronic component, a second electronic component and a plurality of interconnection structures. The first electronic component has a first surface. The second electronic component is over the first electronic component, and the second electronic component has a second surface facing the first surface of the first electronic component. The interconnection structures are between and electrically connected to the first electronic component and the second electronic component, wherein each of the interconnection structures has a length along a first direction substantially parallel to the first surface and the second surface, a width along a second direction substantially parallel to the first surface and the second surface and substantially perpendicular to the first direction, and the length is larger than the width of at least one of the interconnection structures.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2018366440A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2018366440A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2018366440A13</originalsourceid><addsrcrecordid>eNrjZLAKdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UXADivo6-oW6OTqHhAZ5-rkrhHi4KgQ7-rryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjA0MLYzMzExMDR0Nj4lQBAFGPKd4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>HOU, SHANG-YUN ; WU, CHI-HSI ; CHEN, WEIMING CHRIS ; YU, TU-HAO ; TING, KUOIANG</creator><creatorcontrib>HOU, SHANG-YUN ; WU, CHI-HSI ; CHEN, WEIMING CHRIS ; YU, TU-HAO ; TING, KUOIANG</creatorcontrib><description>A semiconductor device includes a first electronic component, a second electronic component and a plurality of interconnection structures. The first electronic component has a first surface. The second electronic component is over the first electronic component, and the second electronic component has a second surface facing the first surface of the first electronic component. The interconnection structures are between and electrically connected to the first electronic component and the second electronic component, wherein each of the interconnection structures has a length along a first direction substantially parallel to the first surface and the second surface, a width along a second direction substantially parallel to the first surface and the second surface and substantially perpendicular to the first direction, and the length is larger than the width of at least one of the interconnection structures.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20181220&amp;DB=EPODOC&amp;CC=US&amp;NR=2018366440A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20181220&amp;DB=EPODOC&amp;CC=US&amp;NR=2018366440A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HOU, SHANG-YUN</creatorcontrib><creatorcontrib>WU, CHI-HSI</creatorcontrib><creatorcontrib>CHEN, WEIMING CHRIS</creatorcontrib><creatorcontrib>YU, TU-HAO</creatorcontrib><creatorcontrib>TING, KUOIANG</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME</title><description>A semiconductor device includes a first electronic component, a second electronic component and a plurality of interconnection structures. The first electronic component has a first surface. The second electronic component is over the first electronic component, and the second electronic component has a second surface facing the first surface of the first electronic component. The interconnection structures are between and electrically connected to the first electronic component and the second electronic component, wherein each of the interconnection structures has a length along a first direction substantially parallel to the first surface and the second surface, a width along a second direction substantially parallel to the first surface and the second surface and substantially perpendicular to the first direction, and the length is larger than the width of at least one of the interconnection structures.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UXADivo6-oW6OTqHhAZ5-rkrhHi4KgQ7-rryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjA0MLYzMzExMDR0Nj4lQBAFGPKd4</recordid><startdate>20181220</startdate><enddate>20181220</enddate><creator>HOU, SHANG-YUN</creator><creator>WU, CHI-HSI</creator><creator>CHEN, WEIMING CHRIS</creator><creator>YU, TU-HAO</creator><creator>TING, KUOIANG</creator><scope>EVB</scope></search><sort><creationdate>20181220</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME</title><author>HOU, SHANG-YUN ; WU, CHI-HSI ; CHEN, WEIMING CHRIS ; YU, TU-HAO ; TING, KUOIANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018366440A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HOU, SHANG-YUN</creatorcontrib><creatorcontrib>WU, CHI-HSI</creatorcontrib><creatorcontrib>CHEN, WEIMING CHRIS</creatorcontrib><creatorcontrib>YU, TU-HAO</creatorcontrib><creatorcontrib>TING, KUOIANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HOU, SHANG-YUN</au><au>WU, CHI-HSI</au><au>CHEN, WEIMING CHRIS</au><au>YU, TU-HAO</au><au>TING, KUOIANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME</title><date>2018-12-20</date><risdate>2018</risdate><abstract>A semiconductor device includes a first electronic component, a second electronic component and a plurality of interconnection structures. The first electronic component has a first surface. The second electronic component is over the first electronic component, and the second electronic component has a second surface facing the first surface of the first electronic component. The interconnection structures are between and electrically connected to the first electronic component and the second electronic component, wherein each of the interconnection structures has a length along a first direction substantially parallel to the first surface and the second surface, a width along a second direction substantially parallel to the first surface and the second surface and substantially perpendicular to the first direction, and the length is larger than the width of at least one of the interconnection structures.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2018366440A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T10%3A57%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HOU,%20SHANG-YUN&rft.date=2018-12-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2018366440A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true