STRUCTURE FOR REDUCING COMPOUND SEMICONDUCTOR WAFER DISTORTION

An improved structure for reducing compound semiconductor wafer distortion comprises a contact metal layer formed on a bottom surface of a compound semiconductor wafer, at least one stress balance layer formed on a bottom surface of the contact metal layer and made of nonconductive material, stress...

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Bibliographische Detailangaben
Hauptverfasser: HUA, Chang-Hwang, CHU, Wen
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An improved structure for reducing compound semiconductor wafer distortion comprises a contact metal layer formed on a bottom surface of a compound semiconductor wafer, at least one stress balance layer formed on a bottom surface of the contact metal layer and made of nonconductive material, stress balance layer via holes and a die attachment layer. Each stress balance layer via hole penetrates the stress balance layer. The die attachment layer is made of conductive material, formed on a bottom surface of the stress balance layer and an inner surface of each stress balance layer via hole, and electrically connected with the contact metal layer through the stress balance layer via holes. By locating the stress balance layer between the contact metal layer and the die attachment layer, the stress suffered by the compound semiconductor wafer is balanced so that the distortion of the compound semiconductor wafer is reduced.