SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device includes an isolation insulating layer disposed over a substrate, a fin structure disposed over the substrate, and extending in a first direction in plan view, an upper portion of the fin structure being exposed from the isolation insulating layer, a gate structure disposed ov...

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Bibliographische Detailangaben
Hauptverfasser: CHAO, Yuan-Shun, KUO, Chih-Wei
Format: Patent
Sprache:eng
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