WET ETCH REMOVAL OF Ru SELECTIVE TO OTHER METALS

A method for forming a conductive structure for a semiconductor device includes depositing a barrier layer in a trench formed in a dielectric material and forming an interface layer over the barrier layer. A main conductor is formed over the interface layer, and the main conductor is recessed select...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Peethala, Cornelius B, Rath, David L, Briggs, Benjamin D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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