THERMAL BUDGET ENHANCEMENT OF A MAGNETIC TUNNEL JUNCTION
Embodiments of the disclosure are directed to a magnetic tunneling junction (MTJ) that includes a diffusion barrier. The diffusion barrier can be disposed between two ferromagnetic layers of the MTJ. More specifically, the diffusion barrier can be disposed between a first ferromagnetic layer, which...
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| creator | BERGSTROM, Daniel B RAHMAN, Tofizur WIEGAND, Christopher J |
| description | Embodiments of the disclosure are directed to a magnetic tunneling junction (MTJ) that includes a diffusion barrier. The diffusion barrier can be disposed between two ferromagnetic layers of the MTJ. More specifically, the diffusion barrier can be disposed between a first ferromagnetic layer, which is adjacent to a natural antiferromagnetic layer, and a second ferromagnetic layer; the first and second ferromagnetic layers and the diffusion barrier being part of a synthetic antiferromagnet. The diffusion barrier can be made of a refractory metal, such as tantalum. The diffusion barrier acts as a barrier for manganese diffusion from the natural antiferromagnetic layer into the synthetic antiferromagnet and other higher layers of the MTJ. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TRANSFORMERS |
| title | THERMAL BUDGET ENHANCEMENT OF A MAGNETIC TUNNEL JUNCTION |
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