METHOD OF FABRICATING PATTERN STRUCTURE

METHOD OF FABRICATING PATTERN STRUCTURE

A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patter...

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Hauptverfasser: YI, Shiyong, MAEDA, SHIGENOBU, PARK, Jeong Ju, KIM, Eunsung, KIM, Hyunwoo
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator YI, Shiyong
MAEDA, SHIGENOBU
PARK, Jeong Ju
KIM, Eunsung
KIM, Hyunwoo
description A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF FABRICATING PATTERN STRUCTURE
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