Methods for Fabricating Artificial Neural Networks (ANN) Based on Doped Semiconductor Elements

A method of forming semiconductor elements in an artificial neural network, the method including forming a substrate including an oxide layer, forming a Silicon layer on the oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the th...

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Hauptverfasser:	COPEL, Matthew Warren, HANNON, James Bowler, OIDA, Satoshi, AFZALI-ARDAKANI, Ali
Format:	Patent
Sprache:	eng
Schlagworte:	CALCULATING COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING ELECTRICITY PHYSICS
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creator	COPEL, Matthew Warren HANNON, James Bowler OIDA, Satoshi AFZALI-ARDAKANI, Ali
description	A method of forming semiconductor elements in an artificial neural network, the method including forming a substrate including an oxide layer, forming a Silicon layer on the oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.
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title	Methods for Fabricating Artificial Neural Networks (ANN) Based on Doped Semiconductor Elements
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