FINFETs WITH STRAINED CHANNELS AND REDUCED ON STATE RESISTANCE

The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs with strained channels and reduced on state resistances and methods of manufacture. The structure includes: a plurality of fin structures comprising doped source and drain regions with a diffusion...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MCARDLE, Timothy J, LEE, Rinus Tek Po, Ray, Shishir K, KRISHNAN, Bharat V, SEHGAL, Akshey
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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