FINFETs WITH STRAINED CHANNELS AND REDUCED ON STATE RESISTANCE

FINFETs WITH STRAINED CHANNELS AND REDUCED ON STATE RESISTANCE

The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs with strained channels and reduced on state resistances and methods of manufacture. The structure includes: a plurality of fin structures comprising doped source and drain regions with a diffusion...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MCARDLE, Timothy J, LEE, Rinus Tek Po, Ray, Shishir K, KRISHNAN, Bharat V, SEHGAL, Akshey
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs with strained channels and reduced on state resistances and methods of manufacture. The structure includes: a plurality of fin structures comprising doped source and drain regions with a diffusion blocking layer between the doped source and drain regions and an underlying fin region formed within dielectric material.