Method of Manufacturing Semiconductor Device

Method of Manufacturing Semiconductor Device

A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a...

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Hauptverfasser: FUJIKAWA, Makoto, NOZAWA, Syuji, NIINO, Reiji, HASHIMOTO, Hiroyuki, YAMAGUCHI, Tatsuya
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator FUJIKAWA, Makoto
NOZAWA, Syuji
NIINO, Reiji
HASHIMOTO, Hiroyuki
YAMAGUCHI, Tatsuya
description A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of Manufacturing Semiconductor Device
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