SUBSTRATE RETRAINER AND SUBSTRATE PROCESSING APPARATUS
Described is a technique capable of reducing an effect of a substrate retainer on a substrate processing while maintaining a strength of a substrate retainer. Provided is a substrate retainer configured to support a plurality of substrates in horizontal orientation with an interval therebetween, the...
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creator | NONOMURA, Kazuki YAMAZAKI, Hirohisa |
description | Described is a technique capable of reducing an effect of a substrate retainer on a substrate processing while maintaining a strength of a substrate retainer. Provided is a substrate retainer configured to support a plurality of substrates in horizontal orientation with an interval therebetween, the substrate retainer including: main support columns; and auxiliary support columns, wherein: each main support columns is provided with a substrate support member configured to support a substrate; a diameter of each of the auxiliary support columns is larger than a diameter of each of the main support columns and smaller than a length of the substrate support member; a distance between an edge of the substrate and each of the auxiliary support columns is shorter than a distance between the edge of the substrate and each of the main support columns; and all of the auxiliary support columns are not in contact with the substrate. |
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Provided is a substrate retainer configured to support a plurality of substrates in horizontal orientation with an interval therebetween, the substrate retainer including: main support columns; and auxiliary support columns, wherein: each main support columns is provided with a substrate support member configured to support a substrate; a diameter of each of the auxiliary support columns is larger than a diameter of each of the main support columns and smaller than a length of the substrate support member; a distance between an edge of the substrate and each of the auxiliary support columns is shorter than a distance between the edge of the substrate and each of the main support columns; and all of the auxiliary support columns are not in contact with the substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181004&DB=EPODOC&CC=US&NR=2018286725A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181004&DB=EPODOC&CC=US&NR=2018286725A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NONOMURA, Kazuki</creatorcontrib><creatorcontrib>YAMAZAKI, Hirohisa</creatorcontrib><title>SUBSTRATE RETRAINER AND SUBSTRATE PROCESSING APPARATUS</title><description>Described is a technique capable of reducing an effect of a substrate retainer on a substrate processing while maintaining a strength of a substrate retainer. Provided is a substrate retainer configured to support a plurality of substrates in horizontal orientation with an interval therebetween, the substrate retainer including: main support columns; and auxiliary support columns, wherein: each main support columns is provided with a substrate support member configured to support a substrate; a diameter of each of the auxiliary support columns is larger than a diameter of each of the main support columns and smaller than a length of the substrate support member; a distance between an edge of the substrate and each of the auxiliary support columns is shorter than a distance between the edge of the substrate and each of the main support columns; and all of the auxiliary support columns are not in contact with the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDALDnUKDglyDHFVCHIF0p5-rkEKjn4uCgjxgCB_Z9fgYE8_dwXHgABHoFhoMA8Da1piTnEqL5TmZlB2cw1x9tBNLciPTy0uSExOzUstiQ8NNjIwtDCyMDM3MnU0NCZOFQDwoClq</recordid><startdate>20181004</startdate><enddate>20181004</enddate><creator>NONOMURA, Kazuki</creator><creator>YAMAZAKI, Hirohisa</creator><scope>EVB</scope></search><sort><creationdate>20181004</creationdate><title>SUBSTRATE RETRAINER AND SUBSTRATE PROCESSING APPARATUS</title><author>NONOMURA, Kazuki ; YAMAZAKI, Hirohisa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018286725A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NONOMURA, Kazuki</creatorcontrib><creatorcontrib>YAMAZAKI, Hirohisa</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NONOMURA, Kazuki</au><au>YAMAZAKI, Hirohisa</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE RETRAINER AND SUBSTRATE PROCESSING APPARATUS</title><date>2018-10-04</date><risdate>2018</risdate><abstract>Described is a technique capable of reducing an effect of a substrate retainer on a substrate processing while maintaining a strength of a substrate retainer. Provided is a substrate retainer configured to support a plurality of substrates in horizontal orientation with an interval therebetween, the substrate retainer including: main support columns; and auxiliary support columns, wherein: each main support columns is provided with a substrate support member configured to support a substrate; a diameter of each of the auxiliary support columns is larger than a diameter of each of the main support columns and smaller than a length of the substrate support member; a distance between an edge of the substrate and each of the auxiliary support columns is shorter than a distance between the edge of the substrate and each of the main support columns; and all of the auxiliary support columns are not in contact with the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | SUBSTRATE RETRAINER AND SUBSTRATE PROCESSING APPARATUS |
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