SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device includes a plurality of blocks of memory cells, including first, second, and third blocks of a first group of blocks and fourth fifth and sixth blocks of a second group of blocks, a plurality of word lines for each of the blocks, a first decode circuit for the first gro...

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Hauptverfasser: KUMAZAKI, Noriyasu, KATO, Koji
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator KUMAZAKI, Noriyasu
KATO, Koji
description A semiconductor memory device includes a plurality of blocks of memory cells, including first, second, and third blocks of a first group of blocks and fourth fifth and sixth blocks of a second group of blocks, a plurality of word lines for each of the blocks, a first decode circuit for the first group, and a second decode circuit for the second group. When the first block is selected, the first decode circuit transfers a first voltage to the word lines of the first block, transfers a second voltage lower than the first voltage to the word lines of the second block, and causes the word lines of the third block to go into an electrically floating state, and the second decode circuit causes the words lines of the fourth block, the fifth block, and the sixth block into the electrically floating state.
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title SEMICONDUCTOR MEMORY DEVICE
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