ACOUSTIC WAVE DEVICE INCLUDING INTERDIGITAL ELECTRODES COVERED BY SILICON OXYNITRIDE FILM

ACOUSTIC WAVE DEVICE INCLUDING INTERDIGITAL ELECTRODES COVERED BY SILICON OXYNITRIDE FILM

An acoustic wave device includes a piezoelectric substrate, a pair of interleaved interdigital transducer electrodes disposed on the piezoelectric substrate, and a dielectric film including silicon oxynitride covering the pair of interleaved interdigital transducer electrodes. The dielectric film ex...

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Hauptverfasser: Nishimura, Atsushi, Matsuda, Satoru, Kabe, Yoshiro
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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creator Nishimura, Atsushi
Matsuda, Satoru
Kabe, Yoshiro
description An acoustic wave device includes a piezoelectric substrate, a pair of interleaved interdigital transducer electrodes disposed on the piezoelectric substrate, and a dielectric film including silicon oxynitride covering the pair of interleaved interdigital transducer electrodes. The dielectric film exhibits a temperature coefficient of velocity of substantially zero throughout an operating temperature range of the acoustic wave device of between −55° C. and 125° C.
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subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
title ACOUSTIC WAVE DEVICE INCLUDING INTERDIGITAL ELECTRODES COVERED BY SILICON OXYNITRIDE FILM
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