SEMICONDUCTOR DEVICE AND POWER AMPLIFIER CIRCUIT

SEMICONDUCTOR DEVICE AND POWER AMPLIFIER CIRCUIT

A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a...

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Hauptverfasser: OBU, Isao, IDENO, Kaoru, YOSHIDA, Shigeru
Format: Patent
Sprache:eng
Schlagworte:
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator OBU, Isao
IDENO, Kaoru
YOSHIDA, Shigeru
description A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.
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subjects AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND POWER AMPLIFIER CIRCUIT
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