METHOD OF FILLING RETROGRADE RECESSED FEATURES

METHOD OF FILLING RETROGRADE RECESSED FEATURES

Methods for void-free material filling of fine recessed features have been disclosed in various embodiments. According to one embodiment, the method includes a) providing a substrate containing a recessed feature having an opening, a sidewall and a bottom, the sidewall including an area of retrograd...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tapily, Kandabara N, Leusink, Gerrit J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Tapily, Kandabara N
Leusink, Gerrit J
description Methods for void-free material filling of fine recessed features have been disclosed in various embodiments. According to one embodiment, the method includes a) providing a substrate containing a recessed feature having an opening, a sidewall and a bottom, the sidewall including an area of retrograde profile relative to a direction extending from a top of the recessed feature to the bottom of the recessed feature, b) depositing an amount of a material in the recessed feature, the material having a greater thickness at the bottom than on the sidewall of the recessed feature, c) stopping the depositing in step b) before the recessed feature is fully filled with the material, d) etching a portion of the material from the recessed feature, and e) depositing an additional amount of the material to fully fill the recessed feature with the material without any voids in the recessed feature.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2018261450A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2018261450A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2018261450A13</originalsourceid><addsrcrecordid>eNrjZNDzdQ3x8HdR8HdTcPP08fH0c1cIcg0J8ncPcnRxBTKdXYODXV0U3FwdQ0KDXIN5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaGFkZmhiamBo6ExcaoAcYgmmg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF FILLING RETROGRADE RECESSED FEATURES</title><source>esp@cenet</source><creator>Tapily, Kandabara N ; Leusink, Gerrit J</creator><creatorcontrib>Tapily, Kandabara N ; Leusink, Gerrit J</creatorcontrib><description>Methods for void-free material filling of fine recessed features have been disclosed in various embodiments. According to one embodiment, the method includes a) providing a substrate containing a recessed feature having an opening, a sidewall and a bottom, the sidewall including an area of retrograde profile relative to a direction extending from a top of the recessed feature to the bottom of the recessed feature, b) depositing an amount of a material in the recessed feature, the material having a greater thickness at the bottom than on the sidewall of the recessed feature, c) stopping the depositing in step b) before the recessed feature is fully filled with the material, d) etching a portion of the material from the recessed feature, and e) depositing an additional amount of the material to fully fill the recessed feature with the material without any voids in the recessed feature.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180913&amp;DB=EPODOC&amp;CC=US&amp;NR=2018261450A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180913&amp;DB=EPODOC&amp;CC=US&amp;NR=2018261450A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tapily, Kandabara N</creatorcontrib><creatorcontrib>Leusink, Gerrit J</creatorcontrib><title>METHOD OF FILLING RETROGRADE RECESSED FEATURES</title><description>Methods for void-free material filling of fine recessed features have been disclosed in various embodiments. According to one embodiment, the method includes a) providing a substrate containing a recessed feature having an opening, a sidewall and a bottom, the sidewall including an area of retrograde profile relative to a direction extending from a top of the recessed feature to the bottom of the recessed feature, b) depositing an amount of a material in the recessed feature, the material having a greater thickness at the bottom than on the sidewall of the recessed feature, c) stopping the depositing in step b) before the recessed feature is fully filled with the material, d) etching a portion of the material from the recessed feature, and e) depositing an additional amount of the material to fully fill the recessed feature with the material without any voids in the recessed feature.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDzdQ3x8HdR8HdTcPP08fH0c1cIcg0J8ncPcnRxBTKdXYODXV0U3FwdQ0KDXIN5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaGFkZmhiamBo6ExcaoAcYgmmg</recordid><startdate>20180913</startdate><enddate>20180913</enddate><creator>Tapily, Kandabara N</creator><creator>Leusink, Gerrit J</creator><scope>EVB</scope></search><sort><creationdate>20180913</creationdate><title>METHOD OF FILLING RETROGRADE RECESSED FEATURES</title><author>Tapily, Kandabara N ; Leusink, Gerrit J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018261450A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Tapily, Kandabara N</creatorcontrib><creatorcontrib>Leusink, Gerrit J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tapily, Kandabara N</au><au>Leusink, Gerrit J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF FILLING RETROGRADE RECESSED FEATURES</title><date>2018-09-13</date><risdate>2018</risdate><abstract>Methods for void-free material filling of fine recessed features have been disclosed in various embodiments. According to one embodiment, the method includes a) providing a substrate containing a recessed feature having an opening, a sidewall and a bottom, the sidewall including an area of retrograde profile relative to a direction extending from a top of the recessed feature to the bottom of the recessed feature, b) depositing an amount of a material in the recessed feature, the material having a greater thickness at the bottom than on the sidewall of the recessed feature, c) stopping the depositing in step b) before the recessed feature is fully filled with the material, d) etching a portion of the material from the recessed feature, and e) depositing an additional amount of the material to fully fill the recessed feature with the material without any voids in the recessed feature.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2018261450A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF FILLING RETROGRADE RECESSED FEATURES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T12%3A34%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Tapily,%20Kandabara%20N&rft.date=2018-09-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2018261450A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true