PHOTORESIST BRIDGING DEFECT REMOVAL BY REVERSE TONE WEAK DEVELOPER

A method for removing photoresist bridging defects includes coating a photoresist layer over a dielectric layer formed over a substrate, applying a first developer that results in formation of one or more photoresist bridging defects, and applying a second developer to remove the one or more photore...

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Bibliographische Detailangaben
Hauptverfasser:	Petrillo, Karen E, Saulnier, Nicole A, Bi, Zhenxing, Tang, Hao
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for removing photoresist bridging defects includes coating a photoresist layer over a dielectric layer formed over a substrate, applying a first developer that results in formation of one or more photoresist bridging defects, and applying a second developer to remove the one or more photoresist bridging defects. The first developer is an aqueous base developer and the second developer is a reverse tone weak developer (RTWD), the RTWD being a mixture of a first (good) solvent and a second (bad) solvent for the photoresist.