MAGNETIC MEMORY DEVICES

MAGNETIC MEMORY DEVICES

A device that includes a magnetic memory device, includes a magnetic tunnel junction pattern on a substrate and a mask structure on the magnetic tunnel junction pattern. The mask structure includes a conductive pattern and a sacrificial pattern, where the conductive pattern is between the magnetic t...

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1. Verfasser: JEONG, Daeeun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator JEONG, Daeeun
description A device that includes a magnetic memory device, includes a magnetic tunnel junction pattern on a substrate and a mask structure on the magnetic tunnel junction pattern. The mask structure includes a conductive pattern and a sacrificial pattern, where the conductive pattern is between the magnetic tunnel junction pattern and the sacrificial pattern, and the sacrificial pattern includes a material having an etch selectivity with respect to the conductive pattern. The device includes an upper contact plug in contact with a surface of the conductive pattern of the mask structure. The device includes a lower interlayered insulating layer covering a cell region and a peripheral circuit region of the substrate, where the lower interlayered insulating layer on the cell region has a recessed top surface between adjacent magnetic tunnel junction patterns.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MAGNETIC MEMORY DEVICES
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