TRANSISTOR HAVING HIGH ELECTRON MOBILITY

A method for manufacturing a transistor having high electron mobility, encompassing a substrate having a heterostructure, in particular an AlGaN/GaN heterostructure, having the steps of: generation of a gate electrode by patterning a semiconductor layer that is applied onto the heterostructure, the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jauss, Simon, Schwaiger, Stephan, Grieb, Michael
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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