METHOD FOR CONTROLLING VAPOR PHASE GROWTH APPARATUS

According to an aspect of the invention, there is provided a method for controlling a vapor phase growth apparatus, the vapor phase growth apparatus including a first reactor and a second reactor, a first substrate being processed in the first reactor, a second substrate being processed in the secon...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SATO, Yuusuke, TAKAHASHI, Hideshi
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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