METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH IMPROVED RESISTIVITY CONTROL

Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Bibliographische Detailangaben

Hauptverfasser:	Basak, Soubir, Phillips, Richard J, Gitlin, Eric, Zhang, Nan, Lee, HyungMin, Standley, Robert, Ryu, Jae-Woo, Daggolu, Parthiv
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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