METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Method for manufacturing a semiconductor device includes: preparing a first subassembly in which an upper surface of the conductive spacer is soldered on the second conductive member and preliminary solder is provided on a lower surface of the conductive spacer; preparing a second subassembly in whi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HATASA, Keita, SATO, Kaisei, OKUMURA, Tomomi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HATASA, Keita
SATO, Kaisei
OKUMURA, Tomomi
description Method for manufacturing a semiconductor device includes: preparing a first subassembly in which an upper surface of the conductive spacer is soldered on the second conductive member and preliminary solder is provided on a lower surface of the conductive spacer; preparing a second subassembly in which the lower surface of the semiconductor element is soldered on the first conductive member and the bonding wire is joined on upper surface of the semiconductor element; and soldering the upper surface of the semiconductor element in the second subassembly on the lower surface of the conducive spacer in the first subassembly by melting the preliminary solder in the first subassembly
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2018174998A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2018174998A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2018174998A13</originalsourceid><addsrcrecordid>eNrjZND1dQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXCHb19XT293MJdQ4Byrm4hnk6u_IwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQwtDcxNLSwtHQ2PiVAEAasQmtQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>HATASA, Keita ; SATO, Kaisei ; OKUMURA, Tomomi</creator><creatorcontrib>HATASA, Keita ; SATO, Kaisei ; OKUMURA, Tomomi</creatorcontrib><description>Method for manufacturing a semiconductor device includes: preparing a first subassembly in which an upper surface of the conductive spacer is soldered on the second conductive member and preliminary solder is provided on a lower surface of the conductive spacer; preparing a second subassembly in which the lower surface of the semiconductor element is soldered on the first conductive member and the bonding wire is joined on upper surface of the semiconductor element; and soldering the upper surface of the semiconductor element in the second subassembly on the lower surface of the conducive spacer in the first subassembly by melting the preliminary solder in the first subassembly</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180621&amp;DB=EPODOC&amp;CC=US&amp;NR=2018174998A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180621&amp;DB=EPODOC&amp;CC=US&amp;NR=2018174998A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HATASA, Keita</creatorcontrib><creatorcontrib>SATO, Kaisei</creatorcontrib><creatorcontrib>OKUMURA, Tomomi</creatorcontrib><title>METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><description>Method for manufacturing a semiconductor device includes: preparing a first subassembly in which an upper surface of the conductive spacer is soldered on the second conductive member and preliminary solder is provided on a lower surface of the conductive spacer; preparing a second subassembly in which the lower surface of the semiconductor element is soldered on the first conductive member and the bonding wire is joined on upper surface of the semiconductor element; and soldering the upper surface of the semiconductor element in the second subassembly on the lower surface of the conducive spacer in the first subassembly by melting the preliminary solder in the first subassembly</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND1dQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXCHb19XT293MJdQ4Byrm4hnk6u_IwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQwtDcxNLSwtHQ2PiVAEAasQmtQ</recordid><startdate>20180621</startdate><enddate>20180621</enddate><creator>HATASA, Keita</creator><creator>SATO, Kaisei</creator><creator>OKUMURA, Tomomi</creator><scope>EVB</scope></search><sort><creationdate>20180621</creationdate><title>METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><author>HATASA, Keita ; SATO, Kaisei ; OKUMURA, Tomomi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018174998A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HATASA, Keita</creatorcontrib><creatorcontrib>SATO, Kaisei</creatorcontrib><creatorcontrib>OKUMURA, Tomomi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HATASA, Keita</au><au>SATO, Kaisei</au><au>OKUMURA, Tomomi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><date>2018-06-21</date><risdate>2018</risdate><abstract>Method for manufacturing a semiconductor device includes: preparing a first subassembly in which an upper surface of the conductive spacer is soldered on the second conductive member and preliminary solder is provided on a lower surface of the conductive spacer; preparing a second subassembly in which the lower surface of the semiconductor element is soldered on the first conductive member and the bonding wire is joined on upper surface of the semiconductor element; and soldering the upper surface of the semiconductor element in the second subassembly on the lower surface of the conducive spacer in the first subassembly by melting the preliminary solder in the first subassembly</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2018174998A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T04%3A22%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HATASA,%20Keita&rft.date=2018-06-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2018174998A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true