FinFET Structures and Methods of Forming the Same

FinFET Structures and Methods of Forming the Same

A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-functio...

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Hauptverfasser: Fan, Chih-Hsiang, Kuok, Kun-Wa, Wang, Yu-Sheng, Lee, Da-Yuan, Chiu, Ya-Wen, Lee, Hsien-Ming, Yang, Kai-Cyuan
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Fan, Chih-Hsiang
Kuok, Kun-Wa
Wang, Yu-Sheng
Lee, Da-Yuan
Chiu, Ya-Wen
Lee, Hsien-Ming
Yang, Kai-Cyuan
description A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FinFET Structures and Methods of Forming the Same
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