POLY GATE EXTENSION SOURCE TO BODY CONTACT

The present disclosure relates to semiconductor structures and, more particularly, to poly gate extension source to body contact structures and methods of manufacture. The structure includes: a substrate having a doped region; a gate structure over the doped region, the gate structure having a main...

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1. Verfasser: ELLIS-MONAGHAN, John J
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creator ELLIS-MONAGHAN, John J
description The present disclosure relates to semiconductor structures and, more particularly, to poly gate extension source to body contact structures and methods of manufacture. The structure includes: a substrate having a doped region; a gate structure over the doped region, the gate structure having a main body and a gate extension region; and a body contact region straddling over the gate extension region and remote from the main body of the gate structure.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2018166566A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2018166566A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2018166566A13</originalsourceid><addsrcrecordid>eNrjZNAK8PeJVHB3DHFVcI0IcfUL9vT3Uwj2Dw1ydlUI8Vdw8neJVHD29wtxdA7hYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoYWhmZmpmZmjobGxKkCAObbJac</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POLY GATE EXTENSION SOURCE TO BODY CONTACT</title><source>esp@cenet</source><creator>ELLIS-MONAGHAN, John J</creator><creatorcontrib>ELLIS-MONAGHAN, John J</creatorcontrib><description>The present disclosure relates to semiconductor structures and, more particularly, to poly gate extension source to body contact structures and methods of manufacture. The structure includes: a substrate having a doped region; a gate structure over the doped region, the gate structure having a main body and a gate extension region; and a body contact region straddling over the gate extension region and remote from the main body of the gate structure.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180614&amp;DB=EPODOC&amp;CC=US&amp;NR=2018166566A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180614&amp;DB=EPODOC&amp;CC=US&amp;NR=2018166566A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ELLIS-MONAGHAN, John J</creatorcontrib><title>POLY GATE EXTENSION SOURCE TO BODY CONTACT</title><description>The present disclosure relates to semiconductor structures and, more particularly, to poly gate extension source to body contact structures and methods of manufacture. The structure includes: a substrate having a doped region; a gate structure over the doped region, the gate structure having a main body and a gate extension region; and a body contact region straddling over the gate extension region and remote from the main body of the gate structure.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAK8PeJVHB3DHFVcI0IcfUL9vT3Uwj2Dw1ydlUI8Vdw8neJVHD29wtxdA7hYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoYWhmZmpmZmjobGxKkCAObbJac</recordid><startdate>20180614</startdate><enddate>20180614</enddate><creator>ELLIS-MONAGHAN, John J</creator><scope>EVB</scope></search><sort><creationdate>20180614</creationdate><title>POLY GATE EXTENSION SOURCE TO BODY CONTACT</title><author>ELLIS-MONAGHAN, John J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018166566A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ELLIS-MONAGHAN, John J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ELLIS-MONAGHAN, John J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POLY GATE EXTENSION SOURCE TO BODY CONTACT</title><date>2018-06-14</date><risdate>2018</risdate><abstract>The present disclosure relates to semiconductor structures and, more particularly, to poly gate extension source to body contact structures and methods of manufacture. The structure includes: a substrate having a doped region; a gate structure over the doped region, the gate structure having a main body and a gate extension region; and a body contact region straddling over the gate extension region and remote from the main body of the gate structure.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title POLY GATE EXTENSION SOURCE TO BODY CONTACT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T15%3A48%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ELLIS-MONAGHAN,%20John%20J&rft.date=2018-06-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2018166566A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true