SEMICONDUCTOR DEVICE INCLUDING VERTICAL CHANNEL

A semiconductor device includes a substrate having a first region and a second region; a first nanowire in the first region in a direction perpendicular to an upper surface of the substrate; a second nanowire in the second region in a direction perpendicular to the upper surface of the substrate and...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE, Hyung Suk, CANTORO, Mirco, HEO, Yeon Cheol, LEE, Yun Il, LEE, Dong Hun, YUN, Seung Chan, YOE, Chang Min, KIM, Byoung Gi
Format: Patent
Sprache:eng
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