METHOD FOR PRODUCING LIGHT-EMITTING DEVICE

A sacrificial layer is formed on a region for forming the reflective electrode later on the p-type layer, Subsequently, a part of the p-type layer is dry etched to expose an n-type layer. Then, a resist layer having an opening is formed through photolithography on the p-type layer and the n-type lay...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	TOTANI, Shingo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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