SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND BAFFLE STRUCTURE OF THE SUBSTRATE PROCESSING APPARATUS

A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provide...

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Hauptverfasser: KAKUDA, Toru, SHIMADA, Toshiya, AMANO, Tomihiro, YANAI, Hidehiro, HIYAMA, Shin
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creator KAKUDA, Toru
SHIMADA, Toshiya
AMANO, Tomihiro
YANAI, Hidehiro
HIYAMA, Shin
description A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2018144908A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2018144908A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2018144908A13</originalsourceid><addsrcrecordid>eNqNjbEKwjAURbs4iPoPD1wrNNqhjq_Jiy3YpOQlrqVInEQL9SP8bFtwFqcLh3PvXSZvDiV7h56gdVYSc21OgG2LEwucQkO-sgqshgZN0Ch9cLPC1NTSGhWktw4UXWpJKaBRUKLWZ4JpNcwyzV1fTeDn0zpZ3Pr7GDffXCVbTV5Wuzg8uzgO_TU-4qsLvM9EIfL8mBUoDv9ZH7PsP-4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND BAFFLE STRUCTURE OF THE SUBSTRATE PROCESSING APPARATUS</title><source>esp@cenet</source><creator>KAKUDA, Toru ; SHIMADA, Toshiya ; AMANO, Tomihiro ; YANAI, Hidehiro ; HIYAMA, Shin</creator><creatorcontrib>KAKUDA, Toru ; SHIMADA, Toshiya ; AMANO, Tomihiro ; YANAI, Hidehiro ; HIYAMA, Shin</creatorcontrib><description>A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180524&amp;DB=EPODOC&amp;CC=US&amp;NR=2018144908A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180524&amp;DB=EPODOC&amp;CC=US&amp;NR=2018144908A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAKUDA, Toru</creatorcontrib><creatorcontrib>SHIMADA, Toshiya</creatorcontrib><creatorcontrib>AMANO, Tomihiro</creatorcontrib><creatorcontrib>YANAI, Hidehiro</creatorcontrib><creatorcontrib>HIYAMA, Shin</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND BAFFLE STRUCTURE OF THE SUBSTRATE PROCESSING APPARATUS</title><description>A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjbEKwjAURbs4iPoPD1wrNNqhjq_Jiy3YpOQlrqVInEQL9SP8bFtwFqcLh3PvXSZvDiV7h56gdVYSc21OgG2LEwucQkO-sgqshgZN0Ch9cLPC1NTSGhWktw4UXWpJKaBRUKLWZ4JpNcwyzV1fTeDn0zpZ3Pr7GDffXCVbTV5Wuzg8uzgO_TU-4qsLvM9EIfL8mBUoDv9ZH7PsP-4</recordid><startdate>20180524</startdate><enddate>20180524</enddate><creator>KAKUDA, Toru</creator><creator>SHIMADA, Toshiya</creator><creator>AMANO, Tomihiro</creator><creator>YANAI, Hidehiro</creator><creator>HIYAMA, Shin</creator><scope>EVB</scope></search><sort><creationdate>20180524</creationdate><title>SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND BAFFLE STRUCTURE OF THE SUBSTRATE PROCESSING APPARATUS</title><author>KAKUDA, Toru ; SHIMADA, Toshiya ; AMANO, Tomihiro ; YANAI, Hidehiro ; HIYAMA, Shin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018144908A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAKUDA, Toru</creatorcontrib><creatorcontrib>SHIMADA, Toshiya</creatorcontrib><creatorcontrib>AMANO, Tomihiro</creatorcontrib><creatorcontrib>YANAI, Hidehiro</creatorcontrib><creatorcontrib>HIYAMA, Shin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAKUDA, Toru</au><au>SHIMADA, Toshiya</au><au>AMANO, Tomihiro</au><au>YANAI, Hidehiro</au><au>HIYAMA, Shin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND BAFFLE STRUCTURE OF THE SUBSTRATE PROCESSING APPARATUS</title><date>2018-05-24</date><risdate>2018</risdate><abstract>A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
title SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND BAFFLE STRUCTURE OF THE SUBSTRATE PROCESSING APPARATUS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T02%3A41%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAKUDA,%20Toru&rft.date=2018-05-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2018144908A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true