MEMORY CIRCUIT LAYOUT

A memory circuit layout design includes first, second, third, and fourth memory cell regions abutting one another and corresponding to respective first, second, third, and fourth memory cells of the memory circuit. A first oxide diffusion (OD) layout pattern corresponds to a first active structure f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HSU, Kuoyuan (Peter), CHANG, Jacklyn
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
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