BACKSIDE DEVICE CONTACT

BACKSIDE DEVICE CONTACT

A method for fabricating a backside device contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer, includes forming a trench in the device layer. A trench is formed in the device layer. A sacrificial plug is formed in the trench. The...

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Hauptverfasser: Jaffe Mark D, Stamper Anthony K, Shank Steven M, Gambino Jeffrey P
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Jaffe Mark D
Stamper Anthony K
Shank Steven M
Gambino Jeffrey P
description A method for fabricating a backside device contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer, includes forming a trench in the device layer. A trench is formed in the device layer. A sacrificial plug is formed in the trench. The handle wafer is removed to reveal the buried insulator layer. The buried insulator layer is partially removed to expose the sacrificial plug at a bottom of the trench. The sacrificial plug is removed. Backside processing of the buried insulator layer is performed. The trench is filled with a conductor to form a contact plug. A final substrate is connected to the buried insulator layer such that the contact plug contacts metallization of the final substrate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title BACKSIDE DEVICE CONTACT
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