PROTECTION SCHEMES FOR MEMS SWITCH DEVICES
Micro-electromechanical switch (MEMS) devices can be fabricated using integrated circuit fabrication techniques and materials. Such switch devices can provide cycle life and insertion loss performance suiting for use in a broad range of applications including, for example, automated test equipment (...
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creator | Fitzgerald Padraig Liam Salcedo Javier A Parthasarathy Srivatsan |
description | Micro-electromechanical switch (MEMS) devices can be fabricated using integrated circuit fabrication techniques and materials. Such switch devices can provide cycle life and insertion loss performance suiting for use in a broad range of applications including, for example, automated test equipment (ATE), switching for measurement instrumentation (such as a spectrum analyzer, network analyzer, or communication test system), and uses in communication systems, such as for signal processing. MEMS devices can be vulnerable to electrical over-stress, such as associated with electrostatic discharge (ESD) transient events. A solid-state clamp circuit can be incorporated in a MEMS device package to protect one or more MEMS devices from damaging overvoltage conditions. The clamp circuit can include single or multiple blocking junction structures having complementary current-voltage relationships, such as to help linearize a capacitance-to-voltage relationship presented by the clamp circuit. |
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Such switch devices can provide cycle life and insertion loss performance suiting for use in a broad range of applications including, for example, automated test equipment (ATE), switching for measurement instrumentation (such as a spectrum analyzer, network analyzer, or communication test system), and uses in communication systems, such as for signal processing. MEMS devices can be vulnerable to electrical over-stress, such as associated with electrostatic discharge (ESD) transient events. A solid-state clamp circuit can be incorporated in a MEMS device package to protect one or more MEMS devices from damaging overvoltage conditions. 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The clamp circuit can include single or multiple blocking junction structures having complementary current-voltage relationships, such as to help linearize a capacitance-to-voltage relationship presented by the clamp circuit.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC SWITCHES</subject><subject>ELECTRICITY</subject><subject>EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS</subject><subject>EMERGENCY PROTECTIVE DEVICES</subject><subject>GENERATION</subject><subject>RELAYS</subject><subject>SELECTORS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAKCPIPcXUO8fT3Uwh29nD1dQ1WcPMPUvB19Q1WCA73DHH2UHBxDfN0dg3mYWBNS8wpTuWF0twMym6uQHnd1IL8-NTigsTk1LzUkvjQYCMDQwsDC2MTY0tHQ2PiVAEA7fMlrg</recordid><startdate>20180322</startdate><enddate>20180322</enddate><creator>Fitzgerald Padraig Liam</creator><creator>Salcedo Javier A</creator><creator>Parthasarathy Srivatsan</creator><scope>EVB</scope></search><sort><creationdate>20180322</creationdate><title>PROTECTION SCHEMES FOR MEMS SWITCH DEVICES</title><author>Fitzgerald Padraig Liam ; Salcedo Javier A ; Parthasarathy Srivatsan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018083439A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC SWITCHES</topic><topic>ELECTRICITY</topic><topic>EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS</topic><topic>EMERGENCY PROTECTIVE DEVICES</topic><topic>GENERATION</topic><topic>RELAYS</topic><topic>SELECTORS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Fitzgerald Padraig Liam</creatorcontrib><creatorcontrib>Salcedo Javier A</creatorcontrib><creatorcontrib>Parthasarathy Srivatsan</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fitzgerald Padraig Liam</au><au>Salcedo Javier A</au><au>Parthasarathy Srivatsan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROTECTION SCHEMES FOR MEMS SWITCH DEVICES</title><date>2018-03-22</date><risdate>2018</risdate><abstract>Micro-electromechanical switch (MEMS) devices can be fabricated using integrated circuit fabrication techniques and materials. 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subjects | BASIC ELECTRIC ELEMENTS CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC SWITCHES ELECTRICITY EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS EMERGENCY PROTECTIVE DEVICES GENERATION RELAYS SELECTORS SEMICONDUCTOR DEVICES |
title | PROTECTION SCHEMES FOR MEMS SWITCH DEVICES |
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