SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME

SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME

A switching device includes a semiconductor substrate; first and second trenches; gate insulating layers; and gate electrodes. The semiconductor substrate includes a first semiconductor region of a first conductivity type, a body region of a second conductivity type, a second semiconductor region of...

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Hauptverfasser: KUROKAWA Yuto, URAKAMI Yasushi, YAMASHITA Yusuke
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KUROKAWA Yuto
URAKAMI Yasushi
YAMASHITA Yusuke
description A switching device includes a semiconductor substrate; first and second trenches; gate insulating layers; and gate electrodes. The semiconductor substrate includes a first semiconductor region of a first conductivity type, a body region of a second conductivity type, a second semiconductor region of the first conductivity type, first and second bottom semiconductor regions of the second conductivity type disposed in areas extending to bottom surfaces of the first and second trenches, and a connection semiconductor region of the second conductivity type extending from the first trench to reach the second trench in a depth range from a depth of a lower end of the body region to a depth of the bottom surfaces of the first and second trenches, the connection semiconductor region contacting the second semiconductor region, and being connected to the body region, and the first and second bottom semiconductor regions.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
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