FINFET GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes a n-type gate structure over a first semiconductor fin, in which the n-type gate structure is fluorine incorporated and includes a n-type work function metal layer overlying the first high-k dielectric layer. The n-type work function metal layer includes a TiAl (titan...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JANGJIAN Shiu-Ko, Yu Ren-Hau, JENG Chi-Cherng
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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