Tunable Film Bulk Acoustic Resonators and Filters with Integrated Biasing Resistors
In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencie...
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| creator | Shih Yi-Chi Qiu Cindy X Shih Andy Qiu Chunong Qiu Julia Shih Ishiang |
| description | In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators. |
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For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.</description><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; CHEMISTRY ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; COMPOUNDS THEREOF ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; RESONATORS</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180308&DB=EPODOC&CC=US&NR=2018069528A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180308&DB=EPODOC&CC=US&NR=2018069528A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Shih Yi-Chi</creatorcontrib><creatorcontrib>Qiu Cindy X</creatorcontrib><creatorcontrib>Shih Andy</creatorcontrib><creatorcontrib>Qiu Chunong</creatorcontrib><creatorcontrib>Qiu Julia</creatorcontrib><creatorcontrib>Shih Ishiang</creatorcontrib><title>Tunable Film Bulk Acoustic Resonators and Filters with Integrated Biasing Resistors</title><description>In wireless communications, many radio frequency bands are used. 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A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>COMPOUNDS THEREOF</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgOKc1LTMpJVXDLzMlVcCrNyVZwTM4vLS7JTFYISi3Oz0ssyS8qVkjMSwGpKEkFssszSzIUPPNKUtOLEktSUxScMhOLM_PSQcozi0GqeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhhYGZpamRhaOhMXGqAAIVOSY</recordid><startdate>20180308</startdate><enddate>20180308</enddate><creator>Shih Yi-Chi</creator><creator>Qiu Cindy X</creator><creator>Shih Andy</creator><creator>Qiu Chunong</creator><creator>Qiu Julia</creator><creator>Shih Ishiang</creator><scope>EVB</scope></search><sort><creationdate>20180308</creationdate><title>Tunable Film Bulk Acoustic Resonators and Filters with Integrated Biasing Resistors</title><author>Shih Yi-Chi ; Qiu Cindy X ; Shih Andy ; Qiu Chunong ; Qiu Julia ; Shih Ishiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018069528A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>COMPOUNDS THEREOF</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>Shih Yi-Chi</creatorcontrib><creatorcontrib>Qiu Cindy X</creatorcontrib><creatorcontrib>Shih Andy</creatorcontrib><creatorcontrib>Qiu Chunong</creatorcontrib><creatorcontrib>Qiu Julia</creatorcontrib><creatorcontrib>Shih Ishiang</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shih Yi-Chi</au><au>Qiu Cindy X</au><au>Shih Andy</au><au>Qiu Chunong</au><au>Qiu Julia</au><au>Shih Ishiang</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Tunable Film Bulk Acoustic Resonators and Filters with Integrated Biasing Resistors</title><date>2018-03-08</date><risdate>2018</risdate><abstract>In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRONIC CIRCUITRY CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS RESONATORS |
| title | Tunable Film Bulk Acoustic Resonators and Filters with Integrated Biasing Resistors |
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