THICK-FILM PASTES CONTAINING LEAD-TELLURIUM-LITHIUM- OXIDES, AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES

The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.

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Hauptverfasser: TORARDI CARMINE, HANG KENNETH WARREN, VERNOOY PAUL DOUGLAS, LAUGHLIN BRIAN J, Carroll Alan Frederick, MIKESKA KURT RICHARD
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creator TORARDI CARMINE
HANG KENNETH WARREN
VERNOOY PAUL DOUGLAS
LAUGHLIN BRIAN J
Carroll Alan Frederick
MIKESKA KURT RICHARD
description The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.
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The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.</abstract><oa>free_for_read</oa></addata></record>
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language eng
recordid cdi_epo_espacenet_US2018062007A1
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subjects ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CABLES
CASTING
CEMENTS
CERAMICS
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
CONDUCTORS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GLASS
INSULATORS
JOINING GLASS TO GLASS OR OTHER MATERIALS
LIME, MAGNESIA
MAKING METALLIC POWDER
MANUFACTURE OF ARTICLES FROM METALLIC POWDER
METALLURGY
MINERAL OR SLAG WOOL
PERFORMING OPERATIONS
POWDER METALLURGY
REFRACTORIES
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SEMICONDUCTOR DEVICES
SLAG
SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS
SURFACE TREATMENT OF GLASS
TRANSPORTING
TREATMENT OF NATURAL STONE
WORKING METALLIC POWDER
title THICK-FILM PASTES CONTAINING LEAD-TELLURIUM-LITHIUM- OXIDES, AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
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