SYSTEM AND METHOD FOR CHARACTERIZING CRITICAL PARAMETERS RESULTING FROM A SEMICONDUCTOR DEVICE FABRICATION PROCESS
A system includes three related structures. A first structure includes a first finger interposed between a first pair of sidewalls. The first finger has a first length and a first width, and is separated from each of the sidewalls by a first gap having a first spacing. A second structure includes a...
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| creator | Liu Lianjun Holm Paige M |
| description | A system includes three related structures. A first structure includes a first finger interposed between a first pair of sidewalls. The first finger has a first length and a first width, and is separated from each of the sidewalls by a first gap having a first spacing. A second structure includes a second finger interposed between a second pair of sidewalls. The second finger has a second length and the first width, and is separated from each of the sidewalls by a second gap having a second spacing. A third structure includes a third finger interposed between a third pair of sidewalls. The third finger has the second length and a second width, and is separated from each of the sidewalls by a third gap having a second spacing. Resistance and capacitance measurements of the three structures are used to extract critical parameters resulting from a semiconductor device fabrication process. |
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A first structure includes a first finger interposed between a first pair of sidewalls. The first finger has a first length and a first width, and is separated from each of the sidewalls by a first gap having a first spacing. A second structure includes a second finger interposed between a second pair of sidewalls. The second finger has a second length and the first width, and is separated from each of the sidewalls by a second gap having a second spacing. A third structure includes a third finger interposed between a third pair of sidewalls. The third finger has the second length and a second width, and is separated from each of the sidewalls by a third gap having a second spacing. Resistance and capacitance measurements of the three structures are used to extract critical parameters resulting from a semiconductor device fabrication process.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PHYSICS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; SEMICONDUCTOR DEVICES ; TESTING ; TRANSPORTING</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180222&DB=EPODOC&CC=US&NR=2018053698A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180222&DB=EPODOC&CC=US&NR=2018053698A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Liu Lianjun</creatorcontrib><creatorcontrib>Holm Paige M</creatorcontrib><title>SYSTEM AND METHOD FOR CHARACTERIZING CRITICAL PARAMETERS RESULTING FROM A SEMICONDUCTOR DEVICE FABRICATION PROCESS</title><description>A system includes three related structures. A first structure includes a first finger interposed between a first pair of sidewalls. The first finger has a first length and a first width, and is separated from each of the sidewalls by a first gap having a first spacing. A second structure includes a second finger interposed between a second pair of sidewalls. The second finger has a second length and the first width, and is separated from each of the sidewalls by a second gap having a second spacing. A third structure includes a third finger interposed between a third pair of sidewalls. The third finger has the second length and a second width, and is separated from each of the sidewalls by a third gap having a second spacing. 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A first structure includes a first finger interposed between a first pair of sidewalls. The first finger has a first length and a first width, and is separated from each of the sidewalls by a first gap having a first spacing. A second structure includes a second finger interposed between a second pair of sidewalls. The second finger has a second length and the first width, and is separated from each of the sidewalls by a second gap having a second spacing. A third structure includes a third finger interposed between a third pair of sidewalls. The third finger has the second length and a second width, and is separated from each of the sidewalls by a third gap having a second spacing. Resistance and capacitance measurements of the three structures are used to extract critical parameters resulting from a semiconductor device fabrication process.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TESTING TRANSPORTING |
| title | SYSTEM AND METHOD FOR CHARACTERIZING CRITICAL PARAMETERS RESULTING FROM A SEMICONDUCTOR DEVICE FABRICATION PROCESS |
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