Gate-Stack Structure with a Diffusion Barrier Material
This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capa...
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| creator | Zipoli Federico Marchiori Chiara |
| description | This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface. |
| format | Patent |
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The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180222&DB=EPODOC&CC=US&NR=2018053656A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180222&DB=EPODOC&CC=US&NR=2018053656A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Zipoli Federico</creatorcontrib><creatorcontrib>Marchiori Chiara</creatorcontrib><title>Gate-Stack Structure with a Diffusion Barrier Material</title><description>This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBzTyxJ1Q0uSUzOVgguKSpNLiktSlUozyzJUEhUcMlMSystzszPU3BKLCrKTC1S8AWqLspMzOFhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhhYGpsZmpmaOhsbEqQIAFnwuCA</recordid><startdate>20180222</startdate><enddate>20180222</enddate><creator>Zipoli Federico</creator><creator>Marchiori Chiara</creator><scope>EVB</scope></search><sort><creationdate>20180222</creationdate><title>Gate-Stack Structure with a Diffusion Barrier Material</title><author>Zipoli Federico ; Marchiori Chiara</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018053656A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Zipoli Federico</creatorcontrib><creatorcontrib>Marchiori Chiara</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zipoli Federico</au><au>Marchiori Chiara</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Gate-Stack Structure with a Diffusion Barrier Material</title><date>2018-02-22</date><risdate>2018</risdate><abstract>This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Gate-Stack Structure with a Diffusion Barrier Material |
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