POWER SEMICONDUCTOR ELEMENT AND POWER SEMICONDUCTOR MODULE USING SAME

POWER SEMICONDUCTOR ELEMENT AND POWER SEMICONDUCTOR MODULE USING SAME

In a Schottky barrier diode comprising silicon carbide: an active region includes a first semiconductor region of a first conductivity type configuring a first Schottky junction having a plurality of linear patterns between a first electrode and the first semiconductor region and a second semiconduc...

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Hauptverfasser: MATSUSHIMA Hiroyuki, YASUI Kan, OKINO Hiroyuki
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MATSUSHIMA Hiroyuki
YASUI Kan
OKINO Hiroyuki
description In a Schottky barrier diode comprising silicon carbide: an active region includes a first semiconductor region of a first conductivity type configuring a first Schottky junction having a plurality of linear patterns between a first electrode and the first semiconductor region and a second semiconductor region of a second conductivity type adjacent to the first Schottky junction and connected to the first electrode; at the border of the active region and a periphery region, a second Schottky junction comprising the first electrode and the first semiconductor region and having at least one annular pattern surrounding the linear patterns is provided and the second semiconductor region is adjacent to the second Schottky junction and is connected to the first electrode; and the first and second Schottky junctions are conductive parts and the second semiconductor region is a nonconductive part in a forward bias state.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title POWER SEMICONDUCTOR ELEMENT AND POWER SEMICONDUCTOR MODULE USING SAME
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