On-Chip DC-DC Power Converters with Fully Integrated GaN Power Switches, Silicon CMOS Transistors and Magnetic Inductors
Fully integrated, on-chip DC-DC power converters are provided. In one aspect, a DC-DC power converter includes: a SOI wafer having a SOI layer separated from a substrate by a buried insulator, wherein the SOI layer and the buried insulator are selectively removed from at least one first portion of t...
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| creator | Sadana Devendra K Wang Naigang Sprogis Edmund J Deligianni Hariklia |
| description | Fully integrated, on-chip DC-DC power converters are provided. In one aspect, a DC-DC power converter includes: a SOI wafer having a SOI layer separated from a substrate by a buried insulator, wherein the SOI layer and the buried insulator are selectively removed from at least one first portion of the SOI wafer, and wherein the SOI layer and the buried insulator remain present in at least one second portion of the SOI wafer; at least one GaN transistor formed on the substrate in the first portion of the SOI wafer; at least one CMOS transistor formed on the SOI layer in the second portion of the SOI wafer; a dielectric covering the GaN and CMOS transistors; and at least one magnetic inductor formed on the dielectric. A method of forming a fully integrated DC-DC power converter is also provided. |
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In one aspect, a DC-DC power converter includes: a SOI wafer having a SOI layer separated from a substrate by a buried insulator, wherein the SOI layer and the buried insulator are selectively removed from at least one first portion of the SOI wafer, and wherein the SOI layer and the buried insulator remain present in at least one second portion of the SOI wafer; at least one GaN transistor formed on the substrate in the first portion of the SOI wafer; at least one CMOS transistor formed on the SOI layer in the second portion of the SOI wafer; a dielectric covering the GaN and CMOS transistors; and at least one magnetic inductor formed on the dielectric. A method of forming a fully integrated DC-DC power converter is also provided.</description><language>eng</language><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS ; BASIC ELECTRIC ELEMENTS ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180201&DB=EPODOC&CC=US&NR=2018034369A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180201&DB=EPODOC&CC=US&NR=2018034369A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Sadana Devendra K</creatorcontrib><creatorcontrib>Wang Naigang</creatorcontrib><creatorcontrib>Sprogis Edmund J</creatorcontrib><creatorcontrib>Deligianni Hariklia</creatorcontrib><title>On-Chip DC-DC Power Converters with Fully Integrated GaN Power Switches, Silicon CMOS Transistors and Magnetic Inductors</title><description>Fully integrated, on-chip DC-DC power converters are provided. In one aspect, a DC-DC power converter includes: a SOI wafer having a SOI layer separated from a substrate by a buried insulator, wherein the SOI layer and the buried insulator are selectively removed from at least one first portion of the SOI wafer, and wherein the SOI layer and the buried insulator remain present in at least one second portion of the SOI wafer; at least one GaN transistor formed on the substrate in the first portion of the SOI wafer; at least one CMOS transistor formed on the SOI layer in the second portion of the SOI wafer; a dielectric covering the GaN and CMOS transistors; and at least one magnetic inductor formed on the dielectric. A method of forming a fully integrated DC-DC power converter is also provided.</description><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONTROL OR REGULATION THEREOF</subject><subject>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERATION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEELgjAYhr10iOo_fNA1QTOijjGzOpjB9CxjfulgbLLNrH_fAn9ApxdenueZB-9ChaQTPaQkTAk89IgGiFYvNA6NhVG4DrJByg_clMPWMIcNXNh9QqkHeId2A1RIwbUCkhcUSsOUFdZpn2CqgZy1Cp3gPtIM_Hcvg9mTSYuraRfBOjuX5Bpir2u0PePojbqi2yg-RMku2R9PcfIf9QVWAEUp</recordid><startdate>20180201</startdate><enddate>20180201</enddate><creator>Sadana Devendra K</creator><creator>Wang Naigang</creator><creator>Sprogis Edmund J</creator><creator>Deligianni Hariklia</creator><scope>EVB</scope></search><sort><creationdate>20180201</creationdate><title>On-Chip DC-DC Power Converters with Fully Integrated GaN Power Switches, Silicon CMOS Transistors and Magnetic Inductors</title><author>Sadana Devendra K ; Wang Naigang ; Sprogis Edmund J ; Deligianni Hariklia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018034369A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONTROL OR REGULATION THEREOF</topic><topic>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERATION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Sadana Devendra K</creatorcontrib><creatorcontrib>Wang Naigang</creatorcontrib><creatorcontrib>Sprogis Edmund J</creatorcontrib><creatorcontrib>Deligianni Hariklia</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sadana Devendra K</au><au>Wang Naigang</au><au>Sprogis Edmund J</au><au>Deligianni Hariklia</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>On-Chip DC-DC Power Converters with Fully Integrated GaN Power Switches, Silicon CMOS Transistors and Magnetic Inductors</title><date>2018-02-01</date><risdate>2018</risdate><abstract>Fully integrated, on-chip DC-DC power converters are provided. In one aspect, a DC-DC power converter includes: a SOI wafer having a SOI layer separated from a substrate by a buried insulator, wherein the SOI layer and the buried insulator are selectively removed from at least one first portion of the SOI wafer, and wherein the SOI layer and the buried insulator remain present in at least one second portion of the SOI wafer; at least one GaN transistor formed on the substrate in the first portion of the SOI wafer; at least one CMOS transistor formed on the SOI layer in the second portion of the SOI wafer; a dielectric covering the GaN and CMOS transistors; and at least one magnetic inductor formed on the dielectric. A method of forming a fully integrated DC-DC power converter is also provided.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES |
| title | On-Chip DC-DC Power Converters with Fully Integrated GaN Power Switches, Silicon CMOS Transistors and Magnetic Inductors |
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