SEMICONDUCTOR DEVICES INCLUDING ELECTRICALLY ISOLATED PATTERNS AND METHOD OF FABRICATING THE SAME
A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric mater...
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| creator | LEE YOUNGDONG KIM Kl-HYUN PROVINE JOHN SCHINDLER PETER KIM HYO JIN KANG JINSUNG PRINZ FRIEDRICH B WALCH STEPHEN P KIM YONGMIN |
| description | A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICES INCLUDING ELECTRICALLY ISOLATED PATTERNS AND METHOD OF FABRICATING THE SAME |
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