METHOD, APPARATUS, AND SYSTEM HAVING SUPER STEEP RETROGRADE WELL WITH ENGINEERED DOPANT PROFILES

Generally, in one embodiment, the present disclosure is directed to a method for forming a transistor. The method includes: implanting a substrate to form at least one of an n and p doped region; depositing an epitaxial semiconductor layer over the substrate; forming trenches through the epitaxial l...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Brunco David Paul, Johnson Jeffrey Bowman
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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