NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

A non-volatile semiconductor memory device includes a memory array 20, including a plurality of memory elements; a selection part, selecting the memory elements of the memory array based on address data; a mode selection part 30, selecting any one of a RAM mode and a flash mode, where the RAM mode i...

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Hauptverfasser: Lim Seow-Fong, Senoo Makoto
Format: Patent
Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator Lim Seow-Fong
Senoo Makoto
description A non-volatile semiconductor memory device includes a memory array 20, including a plurality of memory elements; a selection part, selecting the memory elements of the memory array based on address data; a mode selection part 30, selecting any one of a RAM mode and a flash mode, where the RAM mode is a mode adapted to overwrite data of the memory element according to writing data, and the flash mode is a mode adapted to overwrite data of the memory element when the writing data is a first value and prohibit overwrite when the writing data is a second value; and a write control part, writing the writing data to the selected memory element according to the RAM mode or the flash mode selected by the mode selection part 30.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2018012655A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2018012655A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2018012655A13</originalsourceid><addsrcrecordid>eNrjZNDw8_fTDfP3cQzx9HFVCHb19XT293MJdQ7xD1LwdfX1D4pUcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGFgaGRmampo6GxsSpAgC0zCU_</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE</title><source>esp@cenet</source><creator>Lim Seow-Fong ; Senoo Makoto</creator><creatorcontrib>Lim Seow-Fong ; Senoo Makoto</creatorcontrib><description>A non-volatile semiconductor memory device includes a memory array 20, including a plurality of memory elements; a selection part, selecting the memory elements of the memory array based on address data; a mode selection part 30, selecting any one of a RAM mode and a flash mode, where the RAM mode is a mode adapted to overwrite data of the memory element according to writing data, and the flash mode is a mode adapted to overwrite data of the memory element when the writing data is a first value and prohibit overwrite when the writing data is a second value; and a write control part, writing the writing data to the selected memory element according to the RAM mode or the flash mode selected by the mode selection part 30.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180111&amp;DB=EPODOC&amp;CC=US&amp;NR=2018012655A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180111&amp;DB=EPODOC&amp;CC=US&amp;NR=2018012655A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lim Seow-Fong</creatorcontrib><creatorcontrib>Senoo Makoto</creatorcontrib><title>NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE</title><description>A non-volatile semiconductor memory device includes a memory array 20, including a plurality of memory elements; a selection part, selecting the memory elements of the memory array based on address data; a mode selection part 30, selecting any one of a RAM mode and a flash mode, where the RAM mode is a mode adapted to overwrite data of the memory element according to writing data, and the flash mode is a mode adapted to overwrite data of the memory element when the writing data is a first value and prohibit overwrite when the writing data is a second value; and a write control part, writing the writing data to the selected memory element according to the RAM mode or the flash mode selected by the mode selection part 30.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDw8_fTDfP3cQzx9HFVCHb19XT293MJdQ7xD1LwdfX1D4pUcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGFgaGRmampo6GxsSpAgC0zCU_</recordid><startdate>20180111</startdate><enddate>20180111</enddate><creator>Lim Seow-Fong</creator><creator>Senoo Makoto</creator><scope>EVB</scope></search><sort><creationdate>20180111</creationdate><title>NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE</title><author>Lim Seow-Fong ; Senoo Makoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018012655A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Lim Seow-Fong</creatorcontrib><creatorcontrib>Senoo Makoto</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lim Seow-Fong</au><au>Senoo Makoto</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE</title><date>2018-01-11</date><risdate>2018</risdate><abstract>A non-volatile semiconductor memory device includes a memory array 20, including a plurality of memory elements; a selection part, selecting the memory elements of the memory array based on address data; a mode selection part 30, selecting any one of a RAM mode and a flash mode, where the RAM mode is a mode adapted to overwrite data of the memory element according to writing data, and the flash mode is a mode adapted to overwrite data of the memory element when the writing data is a first value and prohibit overwrite when the writing data is a second value; and a write control part, writing the writing data to the selected memory element according to the RAM mode or the flash mode selected by the mode selection part 30.</abstract><oa>free_for_read</oa></addata></record>
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PHYSICS
STATIC STORES
title NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T21%3A36%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Lim%20Seow-Fong&rft.date=2018-01-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2018012655A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true