METHOD OF PROGRAMMING SEMICONDUCTOR MEMORY DEVICE

METHOD OF PROGRAMMING SEMICONDUCTOR MEMORY DEVICE

In a method of programming a semiconductor memory device, during a standby period, a standby voltage is applied to word lines coupled to a plurality of memory cells included in a selected memory cell string, and, during a first program period, a first pre-bias voltage is applied to a word line coupl...

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Hauptverfasser: KIM Ji Seon, AHN Sang Tae, KWON Eun Mee
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Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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description In a method of programming a semiconductor memory device, during a standby period, a standby voltage is applied to word lines coupled to a plurality of memory cells included in a selected memory cell string, and, during a first program period, a first pre-bias voltage is applied to a word line coupled to at least one of programmed memory cells of the selected memory cell string. The first pre-bias voltage is greater than the standby voltage.
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STATIC STORES
title METHOD OF PROGRAMMING SEMICONDUCTOR MEMORY DEVICE
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