SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

The present disclosure provides a semiconductor device that may reduce the size of the semiconductor device and a manufacturing method thereof. A silicon layer is provided in a first region of on a sapphire substrate, and a silicon device is formed on the silicon layer. An oxide semiconductor layer...

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Bibliographische Detailangaben
Hauptverfasser: FUJIMAKI HIROKAZU, KANEKO KOICHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure provides a semiconductor device that may reduce the size of the semiconductor device and a manufacturing method thereof. A silicon layer is provided in a first region of on a sapphire substrate, and a silicon device is formed on the silicon layer. An oxide semiconductor layer is provided in a second region on the sapphire substrate, and an oxide semiconductor device is formed in the oxide semiconductor layer. The silicon device is connected to the oxide semiconductor device by plural wiring lines formed in a wiring line layer.