FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME

The present disclosure relates to a field-effect transistor and a method of fabricating the same. A field-effect transistor includes a semiconductor substrate including a first semiconductor material having a first lattice constant, and a fin structure on the semiconductor substrate. The fin structu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Heo Yeoncheol, Cantoro Mirco
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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