Exposure Condition Evaluation Device
The purpose of the present invention is to provide an exposure condition evaluation device that appropriately evaluates a wafer exposure condition or calculates an appropriate exposure condition, on the basis of information obtained from an FEM wafer, without relying on the formation state of the FE...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | TOYODA Yasutaka USHIBA Hiroyuki SHINODA Shinichi SUGAHARA Hitoshi |
description | The purpose of the present invention is to provide an exposure condition evaluation device that appropriately evaluates a wafer exposure condition or calculates an appropriate exposure condition, on the basis of information obtained from an FEM wafer, without relying on the formation state of the FEM wafer. In order to achieve the foregoing, the present invention proposes an exposure condition evaluation device which evaluates an exposure condition of a reduction projection exposure device, on the basis of the information of patterns exposed on a sample by the reduction projection exposure device, and which uses a second feature amount of a plurality of patterns formed by making exposure conditions uniform to correct a first feature amount of a plurality of patterns formed by a plurality of different exposure condition settings. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2017336717A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2017336717A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2017336717A13</originalsourceid><addsrcrecordid>eNrjZFBxrSjILy4tSlVwzs9LySzJzM9TcC1LzClNBDNdUssyk1N5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaG5sbGZuaG5o6ExcaoAtfsn0w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Exposure Condition Evaluation Device</title><source>esp@cenet</source><creator>TOYODA Yasutaka ; USHIBA Hiroyuki ; SHINODA Shinichi ; SUGAHARA Hitoshi</creator><creatorcontrib>TOYODA Yasutaka ; USHIBA Hiroyuki ; SHINODA Shinichi ; SUGAHARA Hitoshi</creatorcontrib><description>The purpose of the present invention is to provide an exposure condition evaluation device that appropriately evaluates a wafer exposure condition or calculates an appropriate exposure condition, on the basis of information obtained from an FEM wafer, without relying on the formation state of the FEM wafer. In order to achieve the foregoing, the present invention proposes an exposure condition evaluation device which evaluates an exposure condition of a reduction projection exposure device, on the basis of the information of patterns exposed on a sample by the reduction projection exposure device, and which uses a second feature amount of a plurality of patterns formed by making exposure conditions uniform to correct a first feature amount of a plurality of patterns formed by a plurality of different exposure condition settings.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171123&DB=EPODOC&CC=US&NR=2017336717A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171123&DB=EPODOC&CC=US&NR=2017336717A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOYODA Yasutaka</creatorcontrib><creatorcontrib>USHIBA Hiroyuki</creatorcontrib><creatorcontrib>SHINODA Shinichi</creatorcontrib><creatorcontrib>SUGAHARA Hitoshi</creatorcontrib><title>Exposure Condition Evaluation Device</title><description>The purpose of the present invention is to provide an exposure condition evaluation device that appropriately evaluates a wafer exposure condition or calculates an appropriate exposure condition, on the basis of information obtained from an FEM wafer, without relying on the formation state of the FEM wafer. In order to achieve the foregoing, the present invention proposes an exposure condition evaluation device which evaluates an exposure condition of a reduction projection exposure device, on the basis of the information of patterns exposed on a sample by the reduction projection exposure device, and which uses a second feature amount of a plurality of patterns formed by making exposure conditions uniform to correct a first feature amount of a plurality of patterns formed by a plurality of different exposure condition settings.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBxrSjILy4tSlVwzs9LySzJzM9TcC1LzClNBDNdUssyk1N5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaG5sbGZuaG5o6ExcaoAtfsn0w</recordid><startdate>20171123</startdate><enddate>20171123</enddate><creator>TOYODA Yasutaka</creator><creator>USHIBA Hiroyuki</creator><creator>SHINODA Shinichi</creator><creator>SUGAHARA Hitoshi</creator><scope>EVB</scope></search><sort><creationdate>20171123</creationdate><title>Exposure Condition Evaluation Device</title><author>TOYODA Yasutaka ; USHIBA Hiroyuki ; SHINODA Shinichi ; SUGAHARA Hitoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017336717A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>TOYODA Yasutaka</creatorcontrib><creatorcontrib>USHIBA Hiroyuki</creatorcontrib><creatorcontrib>SHINODA Shinichi</creatorcontrib><creatorcontrib>SUGAHARA Hitoshi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOYODA Yasutaka</au><au>USHIBA Hiroyuki</au><au>SHINODA Shinichi</au><au>SUGAHARA Hitoshi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Exposure Condition Evaluation Device</title><date>2017-11-23</date><risdate>2017</risdate><abstract>The purpose of the present invention is to provide an exposure condition evaluation device that appropriately evaluates a wafer exposure condition or calculates an appropriate exposure condition, on the basis of information obtained from an FEM wafer, without relying on the formation state of the FEM wafer. In order to achieve the foregoing, the present invention proposes an exposure condition evaluation device which evaluates an exposure condition of a reduction projection exposure device, on the basis of the information of patterns exposed on a sample by the reduction projection exposure device, and which uses a second feature amount of a plurality of patterns formed by making exposure conditions uniform to correct a first feature amount of a plurality of patterns formed by a plurality of different exposure condition settings.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2017336717A1 |
source | esp@cenet |
subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
title | Exposure Condition Evaluation Device |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T18%3A49%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TOYODA%20Yasutaka&rft.date=2017-11-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2017336717A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |