Buried Channel Deeply Depleted Channel Transistor

Semiconductor devices and methods of fabricating such devices are provided. The devices include source and drain regions on one conductivity type separated by a channel length and a gate structure. The devices also include a channel region of the one conductivity type formed in the device region bet...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wang Lingquan, Zhao Dalong, Bakhishev Teymur, Ranade Pushkar, Thompson Scott E
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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