TEMPERATURE CONTROLLED REMOTE PLASMA CLEAN FOR EXHAUST DEPOSIT REMOVAL
Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaus...
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| creator | SCOTNEY-CASTLE Matthew D HILKENE Martin A CARLSON David K |
| description | Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source. |
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The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CLEANING ; CLEANING IN GENERAL ; CRYSTAL GROWTH ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; METALLURGY ; PERFORMING OPERATIONS ; PREVENTION OF FOULING IN GENERAL ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171026&DB=EPODOC&CC=US&NR=2017304877A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171026&DB=EPODOC&CC=US&NR=2017304877A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SCOTNEY-CASTLE Matthew D</creatorcontrib><creatorcontrib>HILKENE Martin A</creatorcontrib><creatorcontrib>CARLSON David K</creatorcontrib><title>TEMPERATURE CONTROLLED REMOTE PLASMA CLEAN FOR EXHAUST DEPOSIT REMOVAL</title><description>Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHALcfUNcA1yDAkNclVw9vcLCfL38XF1UQhy9fUPcVUI8HEM9nVUcPZxdfRTcPMPUnCN8HAMDQ5RcHEN8A_2DAGrC3P04WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaG5sYGJhbm5o6GxsSpAgCLZi2X</recordid><startdate>20171026</startdate><enddate>20171026</enddate><creator>SCOTNEY-CASTLE Matthew D</creator><creator>HILKENE Martin A</creator><creator>CARLSON David K</creator><scope>EVB</scope></search><sort><creationdate>20171026</creationdate><title>TEMPERATURE CONTROLLED REMOTE PLASMA CLEAN FOR EXHAUST DEPOSIT REMOVAL</title><author>SCOTNEY-CASTLE Matthew D ; HILKENE Martin A ; CARLSON David K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017304877A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SCOTNEY-CASTLE Matthew D</creatorcontrib><creatorcontrib>HILKENE Martin A</creatorcontrib><creatorcontrib>CARLSON David K</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SCOTNEY-CASTLE Matthew D</au><au>HILKENE Martin A</au><au>CARLSON David K</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TEMPERATURE CONTROLLED REMOTE PLASMA CLEAN FOR EXHAUST DEPOSIT REMOVAL</title><date>2017-10-26</date><risdate>2017</risdate><abstract>Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLEANING CLEANING IN GENERAL CRYSTAL GROWTH ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | TEMPERATURE CONTROLLED REMOTE PLASMA CLEAN FOR EXHAUST DEPOSIT REMOVAL |
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