METHOD TO IMPROVE CRYSTALLINE REGROWTH

The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer tha...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kwon Oh-Jung, Wang Yun Y, Dillon Sean M, Fugardi Stephen G
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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