VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
A vapor phase growth apparatus includes: a reaction chamber; a support provided in the reaction chamber, the support on which a substrate can be placed; a first gas supply passage supplying first gas including ammonia; a second gas supply passage supplying second gas including metal-organic gas; a p...
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| creator | SATO Yuusuke TAKAHASHI Hideshi |
| description | A vapor phase growth apparatus includes: a reaction chamber; a support provided in the reaction chamber, the support on which a substrate can be placed; a first gas supply passage supplying first gas including ammonia; a second gas supply passage supplying second gas including metal-organic gas; a purge gas supply passage supplying purge gas including ammonia and at least one selected from nitrogen, hydrogen, and inert gas; and a shower head including first region and second region provided around the first region, process gas ejection holes provided in the first region, connected to the first gas supply passage and second gas supply passage and through which the first gas and second gas are supplied into the reaction chamber, a purge gas ejection hole provided in the second region, connected to the purge gas supply passage and through which purge gas is supplied into the reaction chamber. |
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a support provided in the reaction chamber, the support on which a substrate can be placed; a first gas supply passage supplying first gas including ammonia; a second gas supply passage supplying second gas including metal-organic gas; a purge gas supply passage supplying purge gas including ammonia and at least one selected from nitrogen, hydrogen, and inert gas; and a shower head including first region and second region provided around the first region, process gas ejection holes provided in the first region, connected to the first gas supply passage and second gas supply passage and through which the first gas and second gas are supplied into the reaction chamber, a purge gas ejection hole provided in the second region, connected to the purge gas supply passage and through which purge gas is supplied into the reaction chamber.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKcwzwD1II8HAMdlVwD_IPD_FQcAwIcAxyDAkNVnD0c1HAosDXNcTD34WHgTUtMac4lRdKczMou7mGOHvophbkx6cWFyQmp-allsSHBhsZGJobWRhbWpg6GhoTpwoAYsAqHA</recordid><startdate>20171005</startdate><enddate>20171005</enddate><creator>SATO Yuusuke</creator><creator>TAKAHASHI Hideshi</creator><scope>EVB</scope></search><sort><creationdate>20171005</creationdate><title>VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD</title><author>SATO Yuusuke ; TAKAHASHI Hideshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017283985A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SATO Yuusuke</creatorcontrib><creatorcontrib>TAKAHASHI Hideshi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SATO Yuusuke</au><au>TAKAHASHI Hideshi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD</title><date>2017-10-05</date><risdate>2017</risdate><abstract>A vapor phase growth apparatus includes: a reaction chamber; a support provided in the reaction chamber, the support on which a substrate can be placed; a first gas supply passage supplying first gas including ammonia; a second gas supply passage supplying second gas including metal-organic gas; a purge gas supply passage supplying purge gas including ammonia and at least one selected from nitrogen, hydrogen, and inert gas; and a shower head including first region and second region provided around the first region, process gas ejection holes provided in the first region, connected to the first gas supply passage and second gas supply passage and through which the first gas and second gas are supplied into the reaction chamber, a purge gas ejection hole provided in the second region, connected to the purge gas supply passage and through which purge gas is supplied into the reaction chamber.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD |
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