TECHNIQUE FOR OXIDIZING PLASMA POST-TREATMENT FOR REDUCING PHOTOLITHOGRAPHY POISONING AND ASSOCIATED STRUCTURES

TECHNIQUE FOR OXIDIZING PLASMA POST-TREATMENT FOR REDUCING PHOTOLITHOGRAPHY POISONING AND ASSOCIATED STRUCTURES

Embodiments of the present disclosure describe techniques for oxidizing plasma post-treatment for reducing photolithography poisoning. In one embodiment, an apparatus includes a dielectric layer with a plurality of routing features; and an etch stop layer, having a first interface region coupled wit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kosaraju Sreenivas, Plekhanov Pavel S, Iqbal Asad, Brooks John D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of the present disclosure describe techniques for oxidizing plasma post-treatment for reducing photolithography poisoning. In one embodiment, an apparatus includes a dielectric layer with a plurality of routing features; and an etch stop layer, having a first interface region coupled with the dielectric layer and a second interface region disposed opposite to the first interface region. The first interface region has a peak silicon oxide (SiO2) concentration level evenly distributed across the first interface region, and the second interface region has substantially zero silicon oxide (SiO2) concentration level. Other embodiments may be described and/or claimed.